2013. 1. 3 1/2 semiconductor technical data kdr552f schottky barrier type diode revision no : 1 for high speed switching. features h low reverse current, low capacitance. h small package : tfsc. maximum rating (ta=25 ? ) tfsc dim millimeters b 0.80+0.10/-0.05 e 0.40 max 0.13 0.05 f 0.10 max g 0.25 max h a 1.00 0.05 + _ c 0.60 0.05 + _ d 0.30 0.05 + _ + _ e f cathode mark c d b a h g electrical characteristics (ta=25 ? ) characteristic symbol rating unit repetitive peak reverse voltage v rrm 25 v reverse voltage v r 25 v average forward current i o 50 ma non-repetitive peak surge current (10ms) i fsm 200 ma junction temperature t j 125 ? storage temperature range t stg -55 q 125 ? characteristic symbol test condition min. typ. max. unit forward voltage v f i f =1ma - - 0.33 v i f =5ma - - 0.38 reverse current i r v r =20v - - 0.45 a total capacitance c t v r =1v, f=1mhz - - 2.80 pf
2013. 1. 3 2/2 kdr552f revision no : 1
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